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PD-20379
HFA35HB60
HEXFRED
Features
* Reduced RFI and EMI * Reduced Snubbing * Extensive Characterization of Recovery Parameters * Hermetic * Electrically Isolated * Ceramic Eyelets
TM
Ultrafast, Soft Recovery Diode
(ISOLATED BASE)
VR = 600V VF = 1.75V Qrr = 290nC
CATHODE
ANODE
di(rec)M/dt = 400A/s
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
TM
TO-254AA
Absolute Maximum Ratings (per Leg)
Parameter
VR IF @ TC = 100C IFSM @ TC = 25C PD @ TC = 25C TJ TSTG D.C. Reverse Voltage Continuous Forward Current Single Pulse Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
Max.
600 22 225 83 -55 to +150
Units
V A W C
Thermal - Mechanical Characteristics
Parameter
RJC Junction-to-Case, Single Leg Conducting Weight
Typ.
-- 9.3
Max.
1.5 --
Units
C/W g
Note: D.C. = 50% rect. wave 1/2 sine wave, 60 Hz , P.W. = 8.33 ms
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6/30/99
HFA35HB60
Electrical Characteristics (per Leg) @ TJ = 25C (unless otherwise specified)
Parameter
VBR VFM Cathode Anode Breakdown Voltage Max Forward Voltage
Min. Typ. Max. Units
600 -- -- -- -- -- -- -- -- -- -- -- -- -- 56 8.7 -- 1.75 2.25 1.64 10 1.0 59 -- V V A mA pF nH
Test Conditions
IR = 100A IF = 22A IF = 45A See Fig. 1 IF = 22A, TJ = 125C VR = VR Rated See Fig. 2 TJ = 125C, VR = 480V VR = 200V See Fig. 3 Measured from center of bond pad to end of anode bonding wire
IRM CT LS
Max Reverse Leakage Current Junction Capacitance Series Inductance
Dynamic Recovery Characteristics (per Leg) @ TJ = 25C (unless otherwise specified)
Parameter
trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb
Min. Typ. Max. Units
-- -- -- -- -- -- -- -- 60 110 5.2 8.5 190 560 270 170 90 165 7.8 13 290 840 400 250 ns A nC A/s
Test Conditions
TJ = 25C See Fig. TJ = 125C 5 IF = 22A TJ = 25C See Fig. TJ = 125C 6 VR = 200V TJ = 25C See Fig. TJ = 125C 7 dif/dt = 200A/s TJ = 25C See Fig. TJ = 125C 8
Case Outline and Dimensions -- TO-254AA
.12 ( .0 05 ) 3 .7 8 ( .1 49 ) 3 .5 3 ( .1 39 ) -A13 .84 ( .5 45 ) 13 .59 ( .5 35 ) 6.60 ( .260 ) 6.32 ( .249 ) -B 1 .2 7 ( .0 50 ) 1 .0 2 ( .0 40 )
17.40 ( .68 5 ) 16.89 ( .66 5 ) 3 1.40 ( 1.23 5 ) 3 0.39 ( 1.19 9 )
2 0.32 ( .80 0 ) 2 0.07 ( .79 0 )
1 3.84 ( .54 5 ) 1 3.59 ( .53 5 )
L EGEN D 1 - C O L LE C TO R 2 - E M ITT E R 3 - G A TE W
123
1
2
3 - C-
3X 3.81 ( .15 0 ) 2X
1.14 ( .045 ) 0.89 ( .035 ) .50 ( .02 0 ) .25 ( .01 0 ) M CAMB MC
3.81 ( .15 0 )
N O TE S : 1 . D IM E N S IO NIN G & TO L E RA N C IN G P E R A N S I Y 1 4.5M , 1 982 . 2 . A L L D IM E N S IO N S A R E S HO W N IN M IL LIM E TE R S ( IN CH E S ).
LEGEND 1- DRAIN 2- SOURCE 3- GATE
LEGEND 1- DRAIN 2- SOURCE 3- GATE
Conforms to JEDEC Outline TO-254AA Dimensions in Millimeters and ( Inches ) CAUTION BERYLLIA WARNING PER MIL- PRF-19500 Package containing beryllia shall not be ground, sandblasted,machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, eryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
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HFA35HB60
100 1000
R ev erse C u rre n t - I R ( A )
100 10 1 0.1 0.01 0.001 0.0001
TJ = 1 50C TJ = 1 25C
Instantane ous Forward C u rrent - I F (A )
TJ = 25C TJ = -55C
10
0
200
400
600
R e ve rse V o lta g e - V R (V )
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
J un ctio n C a pa cita n ce - C T (pF )
1000
A
T J = 1 50 C T J = 1 25 C T J = 25 C
1 0.0 1.0 2.0 3.0 4.0
TJ = 25C
100
Forward V olta ge D ro p - V FM (V )
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
10 1 10 100 1000
R ev ers e V olta ge - VR (V )
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.01 0.1 1 10
0.1
0.05 0.02 0.01
0.01 0.00001
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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HFA35HB60
150 100
120
I F = 44A I F = 22A I F = 11A I F = 44 A I F = 2 2A I F = 11 A
trr- (nC)
90
Irr- ( A)
10
60
30
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
0 100 1000 1 100
VR = 2 0 0 V T J = 1 2 5 C TJ = 2 5 C
d i f /d t - (A /s )
1000
d i f /d t - (A / s )
Fig. 5 - Typical Reverse Recovery vs. dif/dt
Fig. 6 - Typical Recovery Current vs. dif/dt
2000
10000
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
1600
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
I F = 44 A
Qrr- (nC)
1200
I F = 2 2A I F = 1 1A
di (rec) M/dt- (A /s)
1000
800
I F = 2 2A
I F = 1 1A
400
I F = 4 4A
0 100
di f /dt - (A /s)
1000
100 100
1000
d i f /d t - (A / s )
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
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HFA35HB60
3
IF
t rr ta tb
4
R E V E R S E R E C O V E R Y C IR C U IT
VR = 200V
0 Q rr
2
I RRM
0 .5 I R R M d i(re c)M /d t
5
0.0 1 L = 7 0 H D .U .T . D G IR F P 2 5 0 S
1
0 .7 5 I R R M d i f /d t
4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr
d if/d t ADJUST
1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 6/99
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